Sion™ RF Detector for Endpoint Control

Sion™ RF Detector gives you tighter control and higher yields in chemical vapor deposition (CVD) and etch processes by reliably and accurately determining the chamber clean endpoint. More accurate endpointing means lower on-wafer particle levels and more time between preventative maintenance cycles.

Providing a number of advantages over optical emission spectrometer (OES)-based controllers, Sion works with FabGuard® Integration and Analysis System to reduce the wasted time and materials that result from chamber clean under- or over-etching.

Features

  • Easy drop-in replacement for OES-based instrument for more accurate endpoint control
  • Eliminates chamber clean under- and over-etching, reducing cost of time and materials
  • Reduces required clean gas flow levels and cost
  • Increases tool uptime by eliminating chamber window maintenance and replacement
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